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IKW25T120
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TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
* * * * * * * * *
Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time - 10s G Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 25A VCE(sat),Tj=25C 1.7V Tj,max 150C
E
P-TO-247-3-1 (TO-247AC)
Type IKW25T120
Package TO-247AC
Ordering Code Q67040-S4518
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj Tstg -40...+150 -55...+150 260 C
1)
Symbol VCE IC
Value 1200 50 25
Unit V A
ICpul s IF
75 75
50 25 IFpul s VGE tSC Ptot 75 20 10 190 V s W
VGE = 15V, VCC 1200V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev. 1 Jul-02
Power Semiconductors
IKW25T120
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TrenchStop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 25 A T j =2 5 C T j =1 2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 2 5 A T j =2 5 C T j =1 2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 1m A, VCE=VGE V C E = 12 0 0V, V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 25 A 16 8 0.25 2.5 600 nA S 5.0 1.7 1.7 1.7 5.8 2.2 6.5 mA 1.7 2.0 2.2 2.2 1200 V Symbol Conditions Value min. typ. max. Unit RthJA TO-247AC 40 RthJCD 1.0 RthJC 0.65 K/W Symbol Conditions Max. Value Unit
Power Semiconductors
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Preliminary / Rev. 1 Jul-02
IKW25T120
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Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =2 5 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s V C C = 6 0 0 V, T j = 25 C
-
1860 96 82 155 150
13 -
pF
nC nH A
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =2 5 C , V R = 6 00 V , I F = 2 5 A, d i F / d t =8 0 0 A/ s 200 2.3 21 390 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 2 5 A V G E =- 15 /1 5 V , R G = 22 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 50 30 560 70 2.0 2.2 4.2 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Preliminary / Rev. 1 Jul-02
Power Semiconductors
IKW25T120
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TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =1 5 0 C V R = 6 00 V , I F = 2 5 A, d i F / d t =8 0 0 A/ s 320 5.2 29 320 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 60 0 V, I C = 2 5 A, V G E =- 15 /1 5 V , R G = 2 2 , 1) L =1 8 0n H, 1) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 50 32 660 130 3.0 4.0 7.0 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 4 Preliminary / Rev. 1 Jul-02
Power Semiconductors
IKW25T120
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TrenchStop Series
tp=3s
70A 60A 50A 40A 30A 20A 10A 0A 10Hz TC=110C TC=80C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10s 10A 50s 150s 1A 500s
Ic
Ic
0,1A 1V
20ms DC 10V 100V 1000V
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 22)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
40A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
150W
30A
100W
20A
50W
10A
0W 25C
50C
75C
100C
125C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
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Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
70A 60A
70A 60A
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 0V
15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
VGE=17V
VGE=17V 15V 13V
50A 40A 30A 20A 10A 0A
11V 9V 7V
1V
2V
3V
4V
5V
6V
0V
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
70A 60A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C
IC=50A
IC, COLLECTOR CURRENT
50A 40A 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V 12V TJ=150C 25C
IC=25A IC=15A IC=8A
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
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Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
td(off)
td(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
tf
100 ns
tf td(on) tr
td(on) 10ns tr
10 ns
1ns
0A
10A
20A
30A
40A
1 ns
5
15
25
35
45
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=22, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
td(off)
7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ.
t, SWITCHING TIMES
100ns tf td(on) tr
10ns
0C
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.0mA)
Power Semiconductors
7
Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
14,0mJ
*) Eon and Etsinclude losses due to diode recovery
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
12,0mJ 10,0mJ 8,0mJ 6,0mJ 4,0mJ 2,0mJ 0,0mJ 10A Eoff Eon* 20A 30A 40A
E, SWITCHING ENERGY LOSSES
8 mJ Ets* 6 mJ
Ets*
4 mJ
Eoff Eon*
2 mJ
0 mJ
5
15
25
35
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=22, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E)
7mJ 6mJ 5mJ 4mJ 3mJ
*) E on and E ts include losses due to diode recovery
10mJ
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
9mJ 8mJ 7mJ 6mJ 5mJ 4mJ 3mJ 2mJ 1mJ Eoff Eon* Ets*
E ts *
E off 2mJ E on* 1mJ 0mJ
50C
100C
150C
0mJ 400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E)
Power Semiconductors
8
Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
Ciss
VGE, GATE-EMITTER VOLTAGE
1nF
15V
240V 10V
960V
c, CAPACITANCE
100pF
Coss Crss
5V
0V
0nC
50nC
100nC
150nC
200nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=25 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
15s
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V
200A
10s
150A
100A
5s
50A
0s
0A
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
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Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
VCE, COLLECTOR-EMITTER VOLTAGE
IC, COLLECTOR CURRENT
600V
VCE
60A
60A
600V
400V
40A
40A
400V
IC
20A 200V
200V
20A
0V
IC
0us 0.5us 1us 1.5us
0A
0A 0us
VCE
0.5us 1us 1.5us
0V
t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=22, Tj = 150C, Dynamic test circuit in Figure E)
t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=22, Tj = 150C, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 0.2 10 K/W
-1
10 K/W D=0.5
0
0.1 0.05
R,(K/W) 0.229 0.01 0.192 single pulse 0.174 0.055
R1
0.2 0.1 10 K/W
-1
0.02
10 K/W
-2
, (s)= 1.10*10-1 1.56*10-2 1.35*10-3 1.52*10-4
R2
0.05 0.02 0.01 single pulse
R,(K/W) 0.282 0.317 0.294 0.107
R1
, (s)= 1.01*10-1 1.15*10-2 1.30*10-3 1.53*10-4
R2
C 1 = 1 /R 1
C 2 = 2 /R 2
C 1 = 1 /R 1
C 2 = 2 /R 2
10 K/W 10s
-3
100s
1ms
10ms
100ms
10 K/W 10s
-2
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
10
Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
400ns
Qrr, REVERSE RECOVERY CHARGE
500ns
5C
TJ=150C
trr, REVERSE RECOVERY TIME
4C
300ns
3C
200ns
TJ=150C TJ=25C
2C
TJ=25C
100ns
1C
0ns 400A/s
600A/s
800A/s
1000A/s
0C 400A/s
600A/s
800A/s
1000A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
30A 25A 20A 15A 10A 5A 0A
TJ=150C
-400A/s
TJ=25C TJ=150C
TJ=25C
-300A/s
-200A/s
-100A/s
400A/s
600A/s
800A/s
1000A/s
-0A/s 400A/s
600A/s
800A/s
1000A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
Power Semiconductors
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Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
TJ=25C 60A 150C
2,0V IF=50A 1,5V 25A 15A 8A 1,0V
40A
20A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
0,5V
0A
0V
1V
2V
0,0V
-50C
0C
50C
100C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
12
Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
TO-247AC
symbol
dimensions
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 6.12
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409
A B C D E F G H K L M N
P
0.76 max
0.0299 max
3.61
0.1421
Q
Power Semiconductors
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Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =39pF.
Power Semiconductors
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Preliminary / Rev. 1 Jul-02
IKW25T120
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TrenchStop Series
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
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Preliminary / Rev. 1 Jul-02

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